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| 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55QX-1 (Common Source) ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25C (Pd) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 700 W 75V 20V -65 to +150C +200C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL BVdss Idss Igss Vgs(th) Vds(on) gFS JC1 CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Thermal Resistance TEST CONDITIONS Vgs = 0V, Id =20mA Vds = 38V, Vgs= 0V Vgs = 10V, Vds = 0V Vds = 10V, Id = 40 mA Vgs = 10V, Id = 2A Vds = 10V, Id = 2A MIN 75 10 1 6 0.3 2 0.25 TYP MAX UNITS V A A V V S C/W 3 FUNCTIONAL CHARACTERISTICS @ 25C, Vds = 32V, Idq = 500mA GPS Pd d NOTES: Common Source Power Gain Pulse Droop Drain Efficiency Load Mismatch 1. At rated output power and pulse conditions Pulse width = 32 s, LTDC=2% F=1030/1090 MHz, Pout = 200W F = 1030 MHz, Pout =200W F = 1090 MHz, Pout = 200W 13 43 15 0.5 3:1 dB dB % Rev. B - Apr 2004 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1011LD200 Load Power vs. Drive Power 1030 MHz (typical) 300 250 200 PL (W) PL (W) 300 250 200 150 100 50 0 Load Power vs. Drive Power 1090 MHz (typical) 150 100 50 0 0.0 2.0 4.0 6.0 PD (W) 8.0 10.0 12.0 0.0 2.0 4.0 6.0 PD (W) 8.0 10.0 12.0 Drain Efficiency vs. Load Power 1090 MHz (typical) 0.0 -2.0 -4.0 40.0 30.0 20.0 10.0 0.0 0 50 100 150 200 250 PL (W) RL (dB) Return Loss vs. Load Power 1090 MHz (typical) 60.0 50.0 n (%) -6.0 -8.0 -10.0 -12.0 -14.0 -16.0 0 50 100 150 200 250 PL (W) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1011LD200 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1011LD200 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. This datasheet has been download from: www..com Datasheets for electronics components. |
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